1、Computation and Control
(1) CPU
 No. Device Description RH Packaging Maturity
1 BM3803MGRH Microprocessor: operating frequency: 70MHz /SPARC V8 instruction set √ CPGA391 F
2 BM3803FMGRH Microprocessor: operating frequency: 100MHz /SPARC V8 instruction set √ CPGA391 F
3 BM3108MG Heterogeneous multi-core microprocessor: operating frequency: 400MHz /1 SPARC V8 core /12 DSP cores /floating point performance: 16GFOPS -- PGA391 U
4 BM3823MGRH Microprocessor: operating frequency: 300MHz /SPARC V8 instruction set √ CBGA572 U
5 BMPT1-100 System evaluation board based on BM3803, with CPCI interface -- -- D
6 BMPT4-100 Multi-purpose system evaluation board based on BM3803, supporting CPCI bus extension /ISA bus subset extension -- -- D
(2) SOPC
 No. Device Description RH Packaging Maturity
1 BM3109IB System on programmable chip: integrated with SPARC V8 core /300k system gates FPGA * BGA416 F
2 BMMN1-100 System evaluation board based on BM3109 * -- D
(3) MCU
 No. Device Description RH Packaging Maturity
1 BSC80C32ERH Microcontroller: operating frequency: 30MHz /MCS-51 instruction set -- DIP40 F
2 B89C51S Microcontroller: embedded FLASH /MCS-51 instruction set -- DIP40 F
3 B8097 Microcontroller: 16-bit /MCS-96 instruction set -- PGA68 D
(4) DSP
 No. Device Description RH Packaging Maturity
1 B320C32 32-bit digital signal processor -- QFP144 F
2 LCDSP0102 6713 instruction set, Frequency≤200MHz;
Voltage:3.3V(IO)，1.2V(core);
Typical power consumption＜2W;
Processing power:1200MFLOPS，1600MIPS;		 -- CBGA484 D
(5) 1553B bus controller
 No. Device Description RH Packaging Maturity
1 LHB63825D Radiation hardened 1Mbps 1553B bus controller;Vin:5V;Clock Input: 16MHz/12MHz √ PGA70 D
2 LHB155301 1Mbps 1553B bus controller;Vin:5V
Clock Input: 16MHz/12MHz		 -- PGA70 D
3 LHB155304 4Mbps 1553B bus controller; Vin :3.3V
Clock Input: 16MHz/12MHz		 -- MCP68N D
4 LHB155310 Radiation hardened 10Mbps 1553B bus controller;Vin:5V(analog)，3.3V(digital)
Clock Input: 30MHz		 √ PGA70 F
5 LS-HFT1553V3 1Mbps 1553B bus controller;Vin:3.3V
Clock Input: 16MHz/12MHz		 -- PGA68 D
(6) SOC
 No. Device Description RH Packaging Maturity
1 LC801E Core: compatible with 8051;
Voltage: 1.8V（core），3.3V（IO）;
Frequency≤50MHz;Typical power consumption＜1W; 		 √ CBGA324 F
2 LCSOC3233 Compatible with SPARC V8 instruction set;
Support single or double precision floating-point arithmetic; Voltage: 3.3V（IO），1.8V（core）;
Frequency≤100MHz;Typical power consumption≤1.5W 		 √ CPGA391 F
3 LCSOC3201 Compatible with SPARC V8 instruction set;
Support single or double precision floating-point arithmetic;
Voltage: 3.3V（IO）1.2V（core）;
Frequency≤125MHz;
Typical power consumption≤1.5W                                           		 -- CQFP240 F
4 LCSOC3202 Compatible with SPARC V8 instruction set;
Support single or double precision floating-point arithmetic;
Voltage: 3.3V（IO）1.2V（core）;
Frequency≤130MHz;
Typical power consumption≤1.5W                                                                                                		-- CBGA324 D
5 LCSOC3232 Compatible with SPARC V8 instruction set;
Support single or double precision floating-point arithmetic;
Voltage: 3.3V（IO）1.2V（core）;
Frequency≤200MHz;
Typical power consumption≤1.5W                                                                                                		-- CQFP240 D
(7) SiP
 No. Device Description RH Packaging Maturity
1 LSCCU01 Central Control Unit;
The kernel of LSCCU01 adopts anti radiation SoC based on LCSOC3233 of SPARC V8, external extended CAN bus, 1553B bus driver, 2MB SRAM, 8MB Flash, etc. 		√ PGA220B F
2 LSMEU01 Embedded Management Execution;
MEU is with the anti radiation MCU LC801E as the kernel. It contains external extended CAN bus drive, 512KB SRAM, 64KB FLASH, AD and DA amplify circuit, OC instruction drive circuit, etc. 		√ PGA192B F
3                     
LMAD64		 Mutil-channel Smooth Sampling Converter;
It realizes the intelligent acquisition function of 64 analog channels.
Differential Input Range Of Analog Channel: -10V～+10V              
Data Bus Interface: 8/16 Bit Data Bus
VDigital: 5VD;VAnalog: 5VA，±15V   		√ PGA192B F
4                        
LMSIU64		 Security Instruction Module;
LMSIU64 uses ASIC chip as the instruction controller, and anti radiation KG25A chips as the instruction driver.                                                
IDrive≤ 200mA; VSaturation≤ 1.5V;		 √ PGA104 F
5                        
LMPIU08		 Temperature Manage Module;
It controls 8 channels temperature indicators output through MCM Micro package technology.                                             
DS Port: 8/16 bits                                                  
The No. of Temperature Instruction: 8 channels                     
Instruction;
Load Voltage: ≤+55V; Saturation Voltage Drop: ≤1.5V		 -- PGA56 D
2、Programmable Logic FPGA
(1) FPGA
 No. Device Description RH Packaging Maturity
1 BQR5VSX95T 9.5 million system gates /operating frequency: up to 400MHz √ CCGA1136 U
2 BQR2V6000 6 million system gates /operating frequency: up to 300MHz √ CCGA1144 F
3 BQR2V3000 3 million system gates /operating frequency: up to 300MHz √ CCGA717 F
4 BQR2V1000 1 million system gates /operating frequency: up to 300MHz √ CBGA575 F
5 BQVR300RH 300k system gates /operating frequency: up to 180MHz √ CQFP228 F
6 B4013E
B4013EG
B4013EC 		13k system gates /operating frequency: up to 80MHz -- CPGA223
CPGA141
CLCC132 		F
7 BQ2V6000
BQ2V6000BG1152		 6 million system gates /operating frequency: up to 300MHz -- CCGA1144
PBGA1152		 D
8 BQ2V3000
BQ2V3000BG728		 3 million system gates /operating frequency: up to 300MHz -- CCGA717
PBGA728		 D
9 BQ2V1000BG456
BQ2V1000		 1 million system gates /operating frequency: up to 300MHz -- PBGA456
CBGA575		 F
10 BQV600 600k system gates /operating frequency: up to 180MHz -- CQFP228 F
11 BQV300CQ240A
BQV300CQ228
BQV300BG		 300k system gates /operating frequency: up to 180MHz -- CQFP240
CQFP228
PBGA352		 F
(2) Intelligent Scrubbing Controller for FPGA
 No. Device Description RH Packaging Maturity
1 BSV2CQRH 2nd generation intelligent scrubbing controller for FPGA √ CQFP48 F
2 BSV1 1st generation intelligent scrubbing controller for FPGA √ CLCC44/CQFP44 F
(3) PROM for FPGA
 No. Device Description RH Packaging Maturity
1 BCF32P Capacity: 32M bits -- CSOP48/FS48 U
2 BCF16P Capacity: 16M bits -- CSOP48/FS48 U
3 BCF08P Capacity: 8M bits -- CSOP48/FS48 U
4 BQ18V04CL
BQ18V04CQ		 Capacity: 4M bits -- CLCC44
CQFP44		 F
(4) Mixed-signal FPGA
 No. Device Description RH Packaging Maturity
1 BAF1000 1 million system gates FPGA +ADC +DAC + PROM -- PBGA256 D
3、Data Storage SRAM
  1. (1) SRAM
 No. Device Description RH Packaging Maturity
1 B8CR1M39RH Asynchronous /single port /capacity: 1M×39 Bits /access time: 20ns √ CQFP84 D
2 B8CR1M32RH Asynchronous /single port /capacity: 1M×32 Bits /access time: 20ns √ CQFP84 D
3 B8CR2M32RH Asynchronous /single port /capacity: 2M×32 Bits /access time: 20ns √ CQFP84 D
4 B8R512K39RH Asynchronous /single port /capacity: 512K×39 Bits /access time: 20ns √ CQFP84 D
5 B8CR512K32RH Asynchronous /single port /capacity: 512K×32 Bits /access time: 17ns √ CQFP68 D
6 B8CR256K32RH Asynchronous /single port /capacity: 256K×32 Bits /access time: 25ns √ CQFP68 F
7 B8R512K8RH Asynchronous /single port /capacity: 512K×8 Bits /access time: 15ns √ CFP36 F
8 B8R128K32RH Asynchronous /single port /capacity: 128K×32 Bits /access time: 15ns √ CQFP68 F
9 B65608EARH Asynchronous /single port /capacity: 128K×8 Bits /access time: 45ns √ QFP68 F
10 B7156ARH Asynchronous /single port /capacity: 32K×8 Bits /access time: 40ns √ DIP28 D
11 B7134 Asynchronous /duel port /capacity: 4K×8 Bits /access time: 35ns -- DIP48 D
12 B7133 Asynchronous /dual port /capacity: 2K×16 Bits /access time: 25ns -- LCC68 D
(2) FIFO
 No. Device Description RH Packaging Maturity
1 B7206ARH Asynchronous FIFO /capacity: 16K×9 Bits /access time: 30ns √ DIP28 D
2 B7204ARH Asynchronous FIFO /capacity: 4K×9 Bits /access time: 25ns √ DIP28 D
3 BM2157MD Asynchronous FIFO /capacity: 16K×9 Bits /access time: 30ns -- DIP28 D
4 B7207 Asynchronous FIFO /capacity: 32K×9 Bits /access time: 30ns -- (Pending) U
5 B16C850BRH Enhanced UART with FIFOs/capacity:256Bytes/Frequency:16MHz √ QFP48 F
(3) PROM
 No. Device Description RH Packaging Maturity
1 B28F1MLVRH Asynchronous /single port /capacity: 128K×8 Bits /access time: 65ns √ (Pending) U
2 B28F256LVRH Asynchronous / single port /capacity: 32K×8 Bits /access time: 65ns √ FP28 D
4、Data Transmission
(1) 1553B BUS
No. Device Description RH Packaging Maturity
1 J61580R(B61580RH) 1553B bus communication controller, BC/RT/MT function √ MCP70 F
2 B65170S6RH 1553B bus communication controller, RT function √ MCP70 F
3 B63825RH 1553B bus communication controller, BC/RT/MT function, capacity: 16K×16 Bits √ DIP70 D
4 B64843RH MINI-1553B bus communication controller, BC/RT/MT function √  CQFP80 F
5 B64703RH MINI-1553B bus communication controller, RT function √ CQFP80 F
6 B61580/1 S3/S6 1553B bus communication controller, BC/RT/MT function -- MCP70 F
7 B65170/1 S3/S6 1553B bus communication controller, RT function -- MCP70 F
8 B1567CDT 1553B CMOS dual transceiver -- DIP20 F
9 B1573 Low power 1553B CMOS dual transceiver -- DIP20 D
10 1553B Communication Evaluation Board A 1553B bus communication controlling board based on TMS320F2812, for high reliable embedded application -- -- --
11 1553B Communication Evaluation Board B 1553B bus communication controlling board based on BM3101, supporting 10/100Mbps network and USB2.0 communication -- -- --
12 1553B Communication Evaluation Board C 1553B bus communication controlling board with PCI, B61580/B61581 core /PCI interface -- -- --
（2） PCI BUS
No. Device Description RH Packaging Maturity
1 BM4801MBRH PCI bus interface chip, clock frequency: 33/70MHz √ CBGA360 D
（3） Spacewire BUS
 No. Device Description RH Packaging Maturity
1 BM4802MQRH SpaceWire communication controller, transmission rate: 2~100Mbps √ CQFP196 D
2 BM4803MQRH SpaceWire router, transmission rate: 2~100Mbps √ CQFP196 D
（4） Ethernet BUS
 No. Device Description RH Packaging Maturity
1 BM4805MQRH Gigabit Ethernet PHY chip, 10/100/1000M BASE-T √ (Pending) U
（5） LVDS Interface
 No. Device Description RH Packaging Maturity
1 B54LVDS031RH
B54LVDS032RH 		5V quad LVDS Driver/Receiver, switching rate: 155Mbps √ FP16 F
2 B54LVDSC031RH
B54LVDSC032RH 		5V quad LVDS Driver/Receiver with cold spare inputs, switching rate: 155Mbps √ FP16 D
3 B54LVDS031LVRH
B54LVDS032LVRH 		3.3Vquad LVDS Driver/Receiver, switching rate 400Mbps √ FP16 F
4 B54LVDS217RH
B54LVDS218RH		 LVDS serializer/deserializer, clock frequency: 15MHz~75MHz /throughput rate: up to 1.575Gbps √ FP48 D
5 B54LVDS031
B54LVDS032		 5V quad LVDS Driver/Receiver, switching rate: 155Mbps -- FP16 F
6 B54LVDS031LV
B54LVDS032LV		 3.3Vquad LVDS Driver/Receiver, switching rate: 400Mbps -- FP16 F
（6）422 Interface
 No. Device Description RH Packaging Maturity
1 B26C31CERH
B26C32CERH		 RS422 Driver/Receiver, operating voltage: 5.0V/data signaling rate: up to 10Mbps √ DIP16
FP16 		F
2 B26LV31TERH
B26LV32TERH		 RS422 low voltage Driver/Receiver, operating voltage: 3.3V /data signaling rate: up to 10Mbps √ FP16 F
3 B26C31TF
B26C32TF		 RS422 Driver/Receiver, operating voltage: 5.0V /data signaling rate: up to 10Mbps -- FP16  F
（7）SerDes Interface
No. Device Description RH Packaging Maturity
1 BLK2711MQ 2.5V power supply, power consumption lower than 550Mw, serial data signaling rate: 2.5Gbps, serial port supports 16-bit data -- CQFP68 D
5、Signal Sampling and Switching
(1) Analog MUX
 No. Device Description RH Packaging Maturity
1 BM2119MG 64 channels /on-resistance: 10KΩ √ PGA100 D
2 BM2720MQRH 64 channels /power supply: 0～5V /on-resistance: 1KΩ √ CQFP80 D
3 BM1840AMDRH/
BM1840AMFRH 		High voltage analog switch, operating voltage: ±12V /16 channels /on-resistance: 1KΩ /high-impendence-state for power down output √ DIP28/CFP28 F
4 BM4101ID 32 channels /input analog signal amplitude: 0~5.0V -- DIP48 D
(2) ADC
 No. Device Description RH Packaging Maturity
1 B12D1000RH Dual-channel 12-bit /sampling frequency: 1GSPS √ CCGA376 D
2 B08D1500RH Dual-channel 8-bit /sampling frequency: 1.5GSPS √ CQFP128 D
3 B083000RH 8-bit /sampling frequency: 3GSPS √ CQFP128 D
4 B08D1000RH Dual-channel 8-bit /sampling frequency: 1GSPS √ CQFP128  F
5 B9288RH Dual-channel 8-bit /sampling frequency: 100MSPS √ CQFP48  D
6 B128S102RH 12-bit /8 serial channels /sampling frequency: 1MSPS √ CFP16 D
7 B9245RH 12-bit /sampling frequency: 40MSPS √ LCC32 D
8 B1401RH 14-bit /sampling frequency: 20MSPS √ CFP48 D
9 B9240MGRH
B9240MQRH		 14-bit /sampling frequency: 10MSPS √ CPGA40
CQFP44		 D
10 B9243AMG
B9243MGRH		 14-bit /sampling frequency: 3MSPS √ CPGA40 F
11 B7892RH 10-bit /sampling frequency: 0.5MSPS √ DIP24 D
12 B2543RH 12-bit /11 serial channels /sampling frequency: 66K √ DIP20 D
13 B12D1000 Dual-channel 12-bit /sampling frequency: 1GSPS -- BGA292 D
14 B08D1500 Dual-channel 8-bit /sampling frequency: 1.5GSPS -- CQFP128 F
15 B083000 8-bit /sampling frequency: 3GSPS -- CQFP128 F
16 B08D1000 Dual-channel 8-bit /sampling frequency: 1GSPS -- CQFP128 F
17 B08D500 Dual-channel 8-bit /sampling frequency: 500MSPS -- CQFP128 F
18 B2209 16-bit /sampling frequency: 100MSPS -- CQFP80 F
19 B9288 Dual-channel 8-bit /sampling frequency: 100MSPS -- CQFP48 F
20 B9245 14-bit /sampling frequency: 50MSPS -- CLCC32/QFN32 D
21 B9243MG 14-bit /sampling frequency: 3MSPS -- CPGA40 F
22 B9235-3 12-bit /sampling frequency: 50MSPS -- CLCC28/TSSOP28 D
23 B9240MG 14-bit /sampling frequency: 10MSPS -- CPGA40 D
24 B7892 10-bit /sampling frequency: 0.5MSPS -- DIP24 D
25 B7687 16-bit /250KSPS AD Converter -- CLCC16 D
(3) DAC
 No. Device Description RH Packaging Maturity
1 B9739RH 14-bit /sampling frequency: 2GSPS √ CBGA160 D
2 B9726RHQ 16-bit /sampling frequency: 400MSPS √ CQFP80  F
3 B9122RH 16-bit /sampling frequency: 1GSPS √ CQFP72 D
4 B9764MGRH 14-bit /sampling frequency: 120MSPS √ CPGA28 D
5 B9762AMG 12-bit /sampling frequency: 120MSPS √ CPGA28 F
6 B9762MGRH 12-bit /sampling frequency: 120MSPS √ CPGA28 F
7 B9739 14-bit /sampling frequency: 2.5GSPS -- CBGA160 D
8 B9726MQ 16-bit /sampling frequency: 400MSPS -- CQFP80 F
9 B9764
B9762MG		 14-bit/12-bit /sampling frequency: 120MSPS -- CLCC28
CPGA28		 D
10 B9744/B9742 14-bit/12-bit /sampling frequency: 210MSPS -- CLCC28 D
11 B5320/B5310 12-bit/10-bit /clock frequency: 30MSPS -- CSOP8 D
6、Power Supply
(1) DC/DC Converter
 No. Device Description RH Packaging Maturity
1 LDCD/(20-50)-5-75/SP Vin(V):20-50;Vout (V):5;Pout(W):75 √ MbQ6438-12 U
2 LDCD/(20-50)-5R-5/SP Vin(V):20-50;Vout (V):5;Pout(W):5 √ MQ2727-08 U
3 LDCD/(20-50)-5R-12F/SP Vin (V):20-50; Vout (V):5; Pout(W):12 √ MQ3728-08 U
4 LDCD/(20-50)-15-5F/D1 Vin (V):20-50; Vout (V):±15; Pout(W):5 √ MQ3728-08 U
5 LDCD/(20-50)-5-1.5/SP Vin (V):20-50; Vout (V):5; Pout(W):1.5 √ MQ2520-08 U
6 LDCD/(20-50)-12-1.5/SP Vin (V):20-50; Vout (V):12; Pout(W):1.5 √ MQ2520-08 U
7 LDCD/(20-50)-5-1.5/D1 Vin(V):20-50; Vout (V):±5; Pout(W):1.5 √ MQ2727-08 U
8 LDCD/(20-50)-12-1.5/D1 Vin (V):20-50; Vout (V):±12; Pout(W):1.5 √ MQ2727-08 U
9 LDCD/(20-50)-12R-5/SP Vin (V):20-50; Vout (V):12; Pout(W):5 √ MQ2727-08 U
10 LDCD/(20-50)-15R-5/SP Vin (V):20-50; Vout (V):15; Pout(W):5 √ MQ2727-08 U
11 LDCD/(20-50)-5-5F/D1 Vin (V):20-50; Vout (V):±5; Pout(W):5 √ MQ3728-08 U
12 LDCD/(20-50)-12-5F/D1 Vin (V):20-50; Vout (V):±12; Pout(W):5 √ MQ3728-08 U
13 LDCD/(20-50)-3R3-8F/SP Vin (V):20-50; Vout (V):3.3; Pout(W):8 √ MQ3728-08 U
14 LDCD/(20-50)-12R-15F/SP Vin (V):20-50; Vout (V):12; Pout(W):15 √ MQ3728-08 U
15 LDCD/(20-50)-15R-15F/SP Vin (V):20-50; Vout (V):15; Pout(W):15 √ MQ3728-08 U
16 LDCD/(20-50)-5-12F/D1 Vin (V):20-50; Vout (V):±5; Pout(W):12 √ MQ3728-08 U
17 LDCD/(20-50)-12-15F/D1 Vin (V):20-50; Vout (V):±12; Pout(W):15 √ MQ3728-08 U
18 LDCD/(20-50)-15-15F/D1 Vin (V):20-50; Vout (V):±15; Pout(W):15 √ MQ3728-08 U
19 LDCD/(20-50)-512-15F/T1 Vin (V):20-50; Vout (V):5/±12; Pout(W):15 √ MQ4934-10 U
20 LDCD/(20-50)-515-15F/T1 Vin (V):20-50; Vout (V):5/±15; Pout(W):15 √ MQ4934-10 U
21 LDCD/(20-50)-5R-15V/SP Vin (V):20-50; Vout (V):5; Pout(W):15 √ MQ5328-10 U
22 LDCD/(20-50)-12-15V/D1 Vin (V):20-50; Vout (V):±12; Pout(W):15 √ MQ5328-10 U
23 LDCD/(20-50)-15-15V/D1 Vin (V):20-50; Vout (V):±15; Pout(W):15 √ MQ5328-10 U
24 LDCD/(20-50)-3R3-20F/SP Vin (V):20-50; Vout (V):3.3; Pout(W):20 √ MQ5328-10 U
25 LDCD/(20-50)-5-25F/SP Vin (V):20-50; Vout (V):5; Pout(W):25 √ MQ5328-10 U
26 LDCD/(20-50)-12-30F/SP Vin (V):20-50; Vout (V):12; Pout(W):30 √ MQ5328-10 U
27 LDCD/(20-50)-15-30F/SP Vin (V):20-50; Vout (V):15; Pout(W):30 √ MQ5328-10 U
28 LDCD/(20-50)-5-25F/D1 Vin (V):20-50; Vout (V):±5; Pout(W):25 √ MQ5328-10 U
29 LDCD/(20-50)-12-30F/D1 Vin (V):20-50; Vout (V):±12; Pout(W):30 √ MQ5328-10 U
30 LDCD/(20-50)-512-30F/T1 Vin (V):20-50; Vout (V):5/±12; Pout(W):30 √ MQ4934-10 U
31 LDCD/(20-50)-515-30F/T1 Vin (V):20-50; Vout (V):5/±15; Pout(W):30 √ MQ4934-10 U
32 LDCD/(20-50)-5-50/SP Vin (V):20-50; Vout (V):5; Pout(W):50 √ MbQ6438-12 U
33 LDCD/(20-50)-12-60/SP Vin (V):20-50; Vout (V):12; Pout(W):60 √ MbQ6438-12 U
34 LDCD/(20-50)-15-65/SP Vin (V):20-50; Vout (V):15; Pout(W):65 √ MbQ6438-12 U
35 LDCD/(20-50)-5-50/D1 Vin (V):20-50; Vout (V):±5; Pout(W):50 √ MbQ6438-12 U
36 LDCD/(20-50)-12-60/D1 Vin (V):20-50; Vout (V):±12; Pout(W):60 √ MbQ6438-12 U
37 LDCD/100-2R5-5/SP Vin (V):80-120; Vout (V):2.5; Pout(W):5 √ MQ3728-08 D
38 LDCD/100-3R3-5/SP Vin (V):80-120; Vout (V):3.3; Pout(W):5 √ MQ3728-08 D
39 LDCD/100-5-5/SP Vin (V):80-120; Vout (V):5; Pout(W):5 √ MQ3728-08 D
40 LDCD/100-15-5/SP Vin (V):80-120; Vout (V):15; Pout(W):5 √ MQ3728-08 D
41 LDCD/100-5-5/D1 Vin (V):80-120; Vout (V):±5; Pout(W):5 √ MQ3728-08 D
42 LDCD/100-12-5/D1 Vin (V):80-120; Vout (V):±12; Pout(W):5 √ MQ3728-08 D
43 LDCD/100-3R3-15/SP Vin (V):80-120; Vout (V):3.3; Pout(W):15 √ MQ5328-10 D
44 LDCD/100-5R-15/SP Vin (V):80-120; Vout (V):5; Pout(W):15 √ MQ3728-08 D
45 LDCD/100-12-15/SP Vin (V):80-120; Vout (V):12; Pout(W):15 √ MQ5328-10 D
46 LDCD/100-28-15/SP Vin (V):80-120; Vout (V):28; Pout(W):15 √ MQ3728-08 D
47 LDCD/100-12-15/D1 Vin (V):80-120; Vout (V):±12; Pout(W):15 √ MQ5328-10 D
48 LDCD/100-15-15/D1 Vin (V):80-120; Vout (V):±15; Pout(W):15 √ MQ3728-08 D
49 LDCD/100-3R3-20/SP Vin (V):80-120; Vout (V):3.3; Pout(W):20 √ MQ5328-10 D
50 LDCD/100-5-20/SP Vin (V):80-120; Vout (V):5; Pout(W):20 √ MQ5328-10 D
51 LDCD/100-12-20/D1 Vin (V):80-120; Vout (V):±12; Pout(W):20 √ MQ5328-10 D
52 LDCD/100-15-20/D1 Vin (V):80-120; Vout (V):±15; Pout(W):20 √ MQ5328-10 D
53 LDCD/100-512-20/T1 Vin (V):80-120; Vout (V):5/±12; Pout(W):20 √ MQ4934-10 D
54 LDCD/100-5R-30/SP Vin (V):80-120; Vout (V):5; Pout(W):30 √ MbQ6438-12 D
55 LDCD/100-12-30/SP Vin (V):80-120; Vout (V):12; Pout(W):30 √ MbQ6438-12 D
56 LDCD/100-15-30/SP Vin (V):80-120; Vout (V):15; Pout(W):30 √ MbQ6438-12 D
57 LDCD/100-5-30/D1 Vin (V):80-120; Vout (V):±5; Pout(W):30 √ MbQ6438-12 D
58 LDCD/100-12-30/D1 Vin (V):80-120; Vout (V):±12; Pout(W):30 √ MbQ6438-12 D
59 LDCD/100-512-30/T1 Vin (V):80-120; Vout (V):5/±12; Pout(W):30 √ MbQ6438-12 D
60 LDCD/100-515-30/T1 Vin (V):80-120; Vout (V):5/±15; Pout(W):30 √ MbQ6438-12 D
61 LDCD/100-28-65/SP Vin (V):80-120; Vout (V):28; Pout(W):65 √ MbQ6438-12 D
62 LDCD/100-12-65/D1 Vin (V):80-120; Vout (V):±12; Pout(W):65 √ MbQ6438-12 D
63 LDCD/100-15-65/D1 Vin (V):80-120; Vout (V):±15; Pout(W):65 √ MbQ6438-12 D
64 LFE100-461-300 Vin (V):80-120;Iout(A):3 √ MbQ6438-12 D
65 LFE100-461-100 Vin (V):80-120; Iout(A):1 √ MbQ6438-12 D
66 LFE100-461-80 Vin (V):80-120; Iout(A):0.8 √ MQ3728-05 D
67 LFE100-461-50 Vin (V):80-120; Iout(A):0.5 √ MQ3728-05 D
(2) EMI Filter
 No. Device Description RH Packaging Maturity
1 LFE/(20-50)-461-135 Vin (V):20-50; Iout(A):2.7; Pout(W):135 √ MQ5328-05 U
2 LFE/(20-50)-461-500 Vin (V):20-50; Iout(A):10; Pout(W):500 √ MbQ6438-12 U
3 LFE/(20-50)-461-40 Vin (V):20-50; Iout(A):0.8; Pout(W):40 √ MQ2520-08 U
4 LFE/(20-50)-461-75 Vin (V):20-50; Iout(A):1.5; Pout(W):75 √ MQ3728-05 U
(3) LDO
 No. Device Description RH Packaging Maturity
1 LPS75333 Vin(V):4.3～5.5;Vout(V):3.3;
Vleakage(V) ≤0.255;Iout(A)≤1.5		 √ CSOP18A D
2 LPS75318 Vin (V):2.8～5.5;Vout(V):1.8
V leakage(V) ≤0.255; Iout(A) ≤1.5		 √ CSOP18A D
3 LPS75315 Vin (V):2.7～5.5;Vout(V):1.5
V leakage(V) ≤0.255; Iout(A) ≤1.5		 √ CSOP18A D
4 LPS70345 Vin1 (V):4.3～5.0;Vin2(V):2.7～5.0
Vout1 (V):3.3;Vout2(V):1.2
V leakage(V) ≤0.255;Iout(A) 1≤1;2≤2		 √ CSOP24G D
5 LPS70302 Vin1 (V):2.7～5.0;Vin2(V):2.7～5.0
Vout1 (V):1.2～4.0;Vout2(V):1.2～4.0
V leakage(V)≤0.255;Iout(A)1≤1;2≤2		 √ CSOP24K D
6 LS883 Vin (V):2.7～11.5; Vout(V):1.25～11
Iquiescent : 30μa; Iout (A): 0.2		 √ D08S2 D
7 LW2941 Vin (V)=Vout+2～26;Vout(V):5～20
Iquiescent : 40ma;Iout (A)= 1		 √ CSOP16 D
8 LW5101-00 Vin (V)= Vout+1～26;Vout(V):1.25～25
Iout (A): 1.5		 √ FP10 D
9 LW5101-5.0 Vin (V):6～26; Vout(V):5;Iout (A):1.5 √ FP10 D
10 LW5115-00 Vin (V)= Vout+1～26;Vout (V)1.25～25
Iout (A):1.5		 √ TOP-TAB-S D
11 LW5230-1.5 Vin (V)= Vout +1～26;Vout (V):1.5;
Iout (A):3		 √ SMD-1 D
12 LW5230-1.8 Vin (V)= Vout +1～26
Vout (V):1.8; Iout (A):3		 √ SMD-1 D
13 LW5230-1.9 Vin (V)= Vout +1～26
Vout (V):1.9; Iout (A):3		 √ SMD-1 D
14 LW5230-2.5 Vin (V)= Vout +1～26
Vout (V):2.5; Iout (A): 3		 √ SMD-1 D
15 LW5230-3.3 Vin (V)= Vout +1～26
Vout (V):3.3; Iout (A):3		 √ SMD-1 D
16 LW5230-5.0 Vin (V)= Vout +1～26;Vout (V):5; Iout (A):3 √ SMD-1 D
17 LW5232-1.5G Vin (V)= Vout +1～26
Vout (V):1.5; Iout (A):3		 √ G D
18 LW5232-1.5TD Vin (V)= Vout +1～26
Vout (V):1.5; Iout (A):3		 √ TD D
19 LW5232-1.8G Vin (V)= Vout +1～26
Vout (V):1.8; Iout (A):3		 √ G D
20 LW5232-1.8TD Vin (V)= Vout +1～26
Vout (V):1.8; Iout (A):3		 √ TD D
21 LW5232-1.8TU Vin (V)= Vout +1～26
Vout (V): 1.8; Iout (A):3		 √ TU D
22 LW5232-1.9G Vin (V)= Vout +1～26
Vout (V): 1.9; Iout (A):3		 √ G D
23 LW5232-2.5G Vin (V)= Vout +1～26
Vout (V): 2.5; Iout (A):3		 √ G D
24 LW5232-2.5D Vin (V)= Vout +1～26
Vout (V): 2.5; Iout (A):3		 √ D D
25 LW5232-3.3D Vin (V)= Vout +1～26
Vout (V): 3.3; Iout (A):3		 √ D D
26 LW5232-3.3G Vin (V)= Vout +1～26
Vout (V): 3.3; Iout (A):3		 √ G D
27 LW5232-3.3TD Vin (V)= Vout +1～26
Vout (V): 3.3; Iout (A): 3		 √ TD D
28 LW5232-5.0G Vin (V)= Vout +1～26
Vout (V): 5; Iout (A):3		 √ G D
29 LW5275-1.5 Vin (V)= Vout +1～26
Vout (V): 1.5;Iout (A): 7.5		 √ SMD-1 D
30 LW5275-2.5 Vin (V)= Vout +1～26
Vout (V): 2.5;Iout (A):7.5		 √ SMD-1 D
31 LW5275-3.3 Vin (V)= Vout +1～26
Vout (V): 3.3;Iout (A): 7.5		 √ SMD-1 D
32 LW5275-1.8 Vin (V)= Vout +1～26
Vout (V): 1.8;Iout (A): 7.5		 √ SMD-1 D
33 LW5275-1.9 Vin (V)= Vout +1～26
Vout (V): 1.9;Iout (A):7.5		 √ SMD-1 D
34 LW5275-5.0 Vin (V)= Vout +1～26
Vout (V): 5;Iout (A): 7.5		 √ SMD-1 D
35 LW5275-12 Vin (V)= Vout +1～26
Vout (V):12;Iout (A):7.5		 √ SMD-1 D
36 LW5332-5.0G Vin (V)= -8～-20
Vout (V): -5;Iout (A): -3		 √ G D
37 LW5215-1.8 Vin (V)= Vout +1～26
Vout (V):1.8;Iout (A):1.5		 √ SMD-1 D
38 LW5215-3.3 Vin (V)= Vout +1～26
Vout (V):3.3;Iout (A):1.5		 √ SMD-1 D
(4) Single Chip DC-DC
 No. Device Description RH Packaging Maturity
1 B50601RH Supply voltage: 3V~6.3V /peak efficiency: 90%(Vo=3.3) /Iout: 3A /Vout: 1V~4.5V /switching frequency: 100kHz~1MHz Adjustable internal oscillator √ FP20 D
2 MXT1117 Supply voltage: Vo+2V~9V /quiescent current: 10mA /Iout: 1A /Vout: 1.2V~5V /dropout voltage: 2V /line regulation rate: 0.5%/V /load regulation rate: 0.001%/mA /power supply ripple rejection ratio＞50dB -- SOT223 F
3 B7H1101RH Supply voltage: 1.5V~7V /quiescent current: 10mA /Iout: 3A /Vout: 0.8V~6.5V /dropout voltage: 0.5V /line regulation rate: 0.1%/V /load regulation rate: 1%/A /power supply ripple rejection ratio＞40dB √ FP16 U
(5) Power Supervisor
 No. Device Description RH Packaging Maturity
1 B705RH Supply voltage: 4.75V~5.5V /supply current＜500uA (VCC=5.5V) /reset pulse width: 140ms~280ms /watchdog timeout period: 1s~2.25s /watchdog input pulse＞50ns /manual reset pulse width＞150ns /manual reset output delay＜100ns /RESET output : active-low √ FP8 D
2 B813LRH Supply voltage: 4.75V~5.5V /supply current＜500uA (VCC=5.5V) /reset pulse width: 140ms~280ms /watchdog timeout period: 1s~2.25s /watchdog input pulse＞50ns /manual reset pulse width＞150ns /manual reset output delay＜100ns /RESET output : active-High √ DIP8 D
7、Logic and Level
(1) 16 bit Logic
No. Device Description RH Packaging Maturity
1 B54ACS164245SRHF Bidirectional Multipurpose Transceiver, voltage translation: 3.3-> 5.0V，5.0-> 3.3V, cold spare √ FP48 F
2 B54ACS164245SARH Bidirectional Multipurpose Transceiver, voltage translation: 3.3-> 5.0V, 5.0-> 3.3V, cold spare, warm spare, PU3S √ FP48 D
3 B54AC16245RH 16-bit Transceiver with 3-state output, operating voltage: 5.0V /driVing capacity: 24mA √ FP48 D
4 B54LVT162245RH 16-bit Bus Transceiver, operating voltage: 3.3V /driVing capacity: 24mA √ FP48 D
5 B54ALVTH162245RH 16-bit 2.5/3.3V bidirectional Driver, driVing capacity: 24mA √ FP48 D
6 B54ALVTH162244RH 16-bit 2.5/3.3V Driver, driVing capacity: 8mA √ FP48 D
7 B54ACS164245S Bidirectional Multipurpose Transceiver, voltage translation: 3.3-> 5.0V, 5.0-> 3.3V √ FP48 F
8 B54ACS164245SCS Bidirectional Multipurpose Transceiver in small package -- CSOP48 F
9 B54LVT162245 16-bit Bus Transceiver, driVing capacity: 24mA -- FP48 D
(2) 54AC
No. Device Description RH Packaging Maturity
1 B54AC00RHD/ B54AC00RHF Quad 2-input NAND Gate √ DIP14/FP14 F
2 B54AC02RHD/ B54AC02RHF Quad 2-input NOR Gate √ DIP14/FP14 F
3 B54AC04RHD/ B54AC04RHF Hex Inverter √ DIP14/FP14 F
4 B54AC08RHD/ B54AC08RHF Quad 2-input AND Gate √ DIP14/FP14 F
5 B54AC10RHD/ B54AC10RHF Triple 3-input NAND Gate √ DIP14/FP14 F
6 B54AC11RHD/ B54AC11RHF Triple 3-input AND Gate √ DIP14/FP14 F
7 B54AC14RHD/ B54AC14RHF Hex Inverter with Schmitt Trigger Input √ DIP14/FP14 F
8 B54AC32RHD/ B54AC32RHF Quad 2-input OR Gate √ DIP14/FP14 F
9 B54AC74RHD/ B54AC74RHF Dual D-type Positive Edge-triggered Flip-flop √ DIP14/FP14 F
10 B54AC86RHD/ B54AC86RHF Quad 2-input Exclusive-OR Gate √ DIP14/FP14 F
11 B54AC138RHD/ B54AC138RHF 3-line to 8-line Decoder/Demultiplexer √ DIP16/FP16 F
12 B54AC151RHD/ B54AC151RHF 8-input Multiplexer √ DIP16/FP16 F
13 B54AC161RHD/ B54AC161RHF Synchronous presettable 4-bit Binary Counter √ DIP16/FP16 F
14 B54AC244RHD/ B54AC244RHF Octal Buffer/Line driver with 3-state outputs √ DIP20/FP20 F
15 B54AC245RHD/ B54AC245RHF Octal Bidirectional Transceiver with 3-state outputs √ DIP20/FP20 F
16 B54AC273RHD/ B54AC273RHF Octal D-type Flip-flop with clear √ DIP20/FP20 F
17 B54AC299RHD/ B54AC299RHF 8-input Universal Shift/Storage Register √ DIP20/FP20 F
18 B54AC373RHD/ B54AC373RHF Octal Latch with 3-state outputs √ DIP20/FP20 F
19 B54AC374RHD/ B54AC374RHF Octal D-type Flip-flop with 3-state outputs √ DIP20/FP20 F
20 B54AC377RHD/ B54AC377RHF Octal D-type Flip-flop with clock enable √ DIP20/FP20 F
21 B54AC574RHD/ B54AC574RHF Octal D-type Flip-flop with 3-state outputs √ DIP20/FP20 F
22 B54AC390RH High speed dual decade Counter √ DIP16 F
23 B54AC257RH Quad 2-input Multiplexer with 3-state outputs √ LCC20 F
24 B54AC164RHD/ B54AC164RHF 8-bit Serial-in/Parallel-out Shift Register √ DIP14/FP14 F
25 B54AC165RHD/ B54AC165RHF 8-bit Parallel-in/Serial-out Shift Register √ DIP16/FP16 F
26 B54AC573RH 8-bit Latch with 3-state outputs √ DIP20 F
27 B54AC04D/ B54AC04F Hex Inverter -- DIP14/FP14 F
28 B54AC14D/ B54AC14F Hex Inverter with Schmitt Trigger Input -- DIP14/FP14 F
29 B54AC32D/ B54AC32F Quad 2-input OR Gate -- DIP14/FP14 F
30 B54AC86D/ B54AC86F Quad 2-input Exclusive-OR Gate -- DIP14/FP14 F
31 B54AC245D/ 54AC245F Octal Bidirectional Buffer with 3-state outputs -- DIP20/FP20 F
(3) 54HC
No. Device Description RH Packaging Maturity
1 54HC00 Quad 2-Input NAND Gate √ DIP14 F
2 54HC04 Hex Inverter √ DIP14 F
3 54HC08 Quad 2-Input AND Gate √ DIP14 F
4 54HC10 Triple 3-Input NAND Gate √ DIP14 F
5 54HC11 Triple 3-Input AND Gate √ DIP14 F
6 54HC123 Dual Retriggerable Monostable Multivibrators with Resets √ DIP16 F
7 54HC125 Quad Buffer, Three-State √ DIP14 F
8 54HC138 3- to 8-Line Decoder/Demultiplexer Inverting and Noninverting √ DIP16 F
9 54HC139 Dual 2- to 4-Line Decoder/Demultiplexer √ DIP16 F
10 54HC14 Hex Inverting Schmitt Trigger √ DIP14 F
11 54HC157 Quad 2-Input Multiplexers √ DIP16 F
12 54HC161 4-Bit Binary Counter, Asynchronous Reset √ DIP16 F
13 54HC163 4-Bit Binary Counter, Synchronous Reset √ DIP16 F
14 54HC165 8-Bit Parallel-In/Serial-Out Shift Register √ DIP16 F
15 54HC240 Octal Buffer/Line Drivers, Three-State √ DIP20 F
16 54HC244 Octal Buffer/Line Drivers, Three-State √ DIP20 F
17 54HC245 Octal-Bus Transceiver, Three-State, Non-Inverting √ DIP20 F
18 54HC257 Quad 2-Input Multiplexer with Three-State Non-Inverting Outputs √ DIP16 F
19 54HC27 Triple 3-Input NOR Gate √ DIP14 F
20 54HC32 Quad 2-Input OR Gate √ DIP14 F
21 54HC373 Octal Transparent D-Type Latch with 3-State Outputs √ DIP20 F
22 54HC374 Octal D-Type Flip-Flop, 3-State Positive-Edge Triggered √ DIP20 F
23 54HC4040 12-Stage Binary Counter √ DIP16 F
24 54HC640 Octal Three-State Bus Transceiver, Inverting √ DIP20 F
25 54HC74 Dual D Flip-Flop with Set and Reset Positive-Edge Trigger √ DIP14 F
26 54HC86 Quad 2-Input EXCLUSIVE-OR Gate √ DIP14 F
27 54HC02 Quad Two-Input NOR Gate √ DIP14 F
28 54HC166 8-Bit Parallel-In/Serial-Out Shift Register √ DIP16 F
29 54HC273 Octal D-Type Flip-Flop with Reset √ DIP20 F
30 54HC573 Octal Transparent Latch, Three-State Output √ DIP20 F
31 54HC4514 4- to 16-Line Decoder/Demultiplexer with Input Latches √ DIP24 F
32 54HC02 Quad Two-Input NOR Gate -- DIP14 F
33 54HC221 Dual Monostable Multivibrator with Reset -- DIP16 F
34 54HC4520 Dual Synchronous Counters -- DIP16 F
35 54HC597 8-Bit Shift Register with Input Storage -- DIP16 F
36 54HCT04 High-Speed CMOS Logic Hex Inverter -- DIP14 F
(4) 54LVC/LVCH
No. Device Description RH Packaging Maturity
1 B54LVC14RH Schmitt Trigger Inverter √ DIP14/FP14/LCC20 D
2 B54LVC08RH Quad 2-input AND Gate √ DIP14/FP14/LCC20 D
3 B54LVC74RH Dual D-type Positive Edge-triggered Flip-flop √ LCC20 D
4 B54LVC138RH 3-line to 8-line Decoder/Demultiplexer √ DIP16/FP16/LCC20 D
(5) C4000
No. Device Description RH Packaging Maturity
1 C4067 Single 16-Channel Multiplexer/Demultiplexer √ D24L2/J24M2 F
2 C4000 Dual 3 Input Plus Inverter -- D14、J14、F14 F
3 CC4001 Quad 2 Input Nor Gate -- D14、J14、F14 F
4 CC4002 Dual 4 Input Nor Gate -- D14、J14、F14 F
5 CC4011 Quad 2 Input Nand Gate -- D14、J14、F14 F
6 CC4013 D'-Type Flip-Flop -- D14、J14、F14 F
7 CC4015 Dual 4-Stage Static Shift Register -- D16、J16、F16 F
8 C4017 Decade Counter with 10 Decoded Outputs -- D16、J16、F16 F
9 C4022 Octal Counter with 8 Decoded Outputs -- D16、J16、F16 F
10 CC4025 Triple 3 Input Nor Gate -- D14/J14/FP14A F
11 CC4023 Triple 3 Input Nand Gate -- D14、J14、F14 F
12 C4040 12-Stage Ripple Carry Binary Counter -- D16、J16、F16 F
13 C4043 Quad 3-State Nor R/S Latch -- D16、J16、F16 F
14 CC4050 Hex Non-Inverting Buffer -- D16、J16、F16 F
15 CC4052 Differential 4-Channel Multiplexer -- D16、J16、F16 F
16 C4051 Single 8-Channel Multiplexer -- D16、J16、F16 F
17 C4060 14-Stage Ripple Carry Binary Counter -- D16、J16、F16 F
18 CC4066 Quad Bilateral Switch -- D14、J14、F14 F
19 C4069 Hex Inverter -- D14、J14、F14 F
20 C4070 Quad Exclusive-OR Gate -- D14、J14、F14 F
21 C4071 Quad 2-Input OR Gate -- D14、J14、F14 F
22 C4072 Dual 4-Input OR Gate -- D14、J14、F14 F
23 C4073 Triple 3-Input AND Gate -- D14、J14、F14 F
24 C4077 Quad Exclusive-NOR Gate -- D14、J14、F14 F
25 C4081 Quad 2-Input AND Gate -- D14、J14、F14 F
26 C4082 Dual 4-Input AND Gate -- D14、J14、F14 F
27 C4098 Dual Monostable Multivibrator -- D16、J16、F16 F
28 CC4504 Hex Voltage-Level Shifter -- D16、J16、F16 F
29 CC4520 Dual Binary Up-Counter -- D16、J16、F16 F
30 C40106 Hex Schmitt Trigger -- D14、J14、F14 F
31 CC40109 Quad Low-to-High Voltage Level Shifter -- D16、J16、F16 F
32 CC4538 Radiation Hardened Dual  Monostable Circuit -- D16、J16、F16 F
8、Clock and Radio Frequency
(1) Frequency Synthesizer
 No. Device Description RH Packaging Maturity
1 B4350 Output frequency range: 137.5MHz to 4400MHz; Fractional-N synthesizer and integer-N synthesizer; Low phase noise VCO; Programmable Pout level; Power supply: 3.0 V to 3.6 V; Power dissipation: 130mA -- QFN32L F
2 B4106 Output frequency range: 500MHz to 6000MHz; Programmable dual-modulus prescaler: 8/9, 16/17, 32/33, 64/65; Power supply: 3.0V to 3.6V -- TSSOP16 F
3 B4106RH Output frequency range: 500MHz to 5800MHz; Programmable dual-modulus prescaler: 8/9, 16/17, 32/33, 64/65; Power supply: 3.0V to 3.6V √ FP16 D
4 B7101MQRH Output frequency range: 100MHz-5000MHz; Programmable dual-modulus prescaler: 8/9, 16/17, 32/33; Power supply: 3.0V to 3.6V √ CQFP48 D
5 B4360-7 Output frequency range: 350MHz to1800MHz; Integer-N synthesizer; Low phase noise VCO; Programmable Pout level; Power supply: 3.0V to 3.6V; Power dissipation: 25mA -- QFN24 D
6 B4360-8 Output frequency range: 65MHz to 400MHz; Integer-N synthesizer; Low phase noise VCO; Programmable Pout level; Power supply: 3.0V to 3.6V; Power dissipation: 20-40mA -- QFN24 D
7 B4360-9 Output frequency range: 1.1MHz to200MHz; Integer-N synthesizer; Low phase noise VCO; Programmable Pout level; Power supply: 3.0V to 3.6V; Power dissipation: 20-40mA -- QFN24 D
(2) TIA
 No. Device Description RH Packaging Maturity
1 B3275RH Data rate: 2.125Gbps(NRZ)max; 1.6GHz Input –Referred Noise: 450mARMS; Power supply: 3.0V to 3.6V √ Dice D
(3) Clock Driver
 No. Device Description RH Packaging Maturity
1 B49FCT805RH 1:5 fanout per bank; Guaranteed low skew < 700ps (max.); TTL compatible inputs and outputs; High drive: -24mA IOH, 64mA IOL; Power supply: 3.3-5V √ 20-SOIC
/DIP
/SSOP		 D
(4) Clock Generator
 No. Device Description RH Packaging Maturity
1 B307 Output frequency range: 10MHz to 200MHz; Highly accurate frequency generation; Input crystal frequency of 5 - 27 MHz; Very low jitter: 50ps; Output Clock Rise Time/ Fall Time: 1ns; Power supply: 3.3V -- 16-SOIC D
9、Microwave Switch
(1) SPDT-Switch
 No. Device Description RH Packaging Maturity
1 MS12TL-313S-02 RF Connector:TNC;Frequency:1~3(GHz)
Actuation Temperature:-25~75℃
VSWR:≤1.15;Insertion loss:≤0.1dB
Isolation:﹥70dB		 √ Metallic F
(2) DPDT-Switch
 No. Device Description RH Packaging Maturity
1 MS22SKu-321S-01 RF Connector: SMA;Frequency:DC~2(GHz)
Actuation Temperature:-25~75℃
VSWR:≤1.1 Insertion loss:≤0.08dB
Isolation:﹥65dB		 √ Metallic F
(3) T-Switch
 No. Device Description RH Packaging Maturity
1 MS11TS-331S-02 RF Connector: TNC;Frequency:1~3(GHz))
Actuation Temperature:-25~75℃
VSWR:≤1.2;Insertion loss:≤0.1dB
Isolation:﹥60dB		 √ Metallic F
(4) Waveguide Switch
 No. Device Description RH Packaging Maturity
1 MSC34Ka-341S-01 Frequency:25.0~26.5(GHz)
Actuation Temperature:-20~60℃
VSWR:≤1.15;Insertion loss:≤0.15dB
Isolation:﹥55dB		 √ Metallic F
10、Satellite Navigating Application
(1) Baseband Chip
No. Device Description RH Packaging Maturity
1 BM3005MQ BDS RDSS Baseband Processing Chip, receiVing sensitivity: -157.6dBW /initial acquisition time≤2s /lost reacquisition time≤1s -- LQFP64 F
2 BM3009MQ BDS B3_B1/L1 Baseband Processing Chip, supporting BDS B3/B1、GPS-L1 frequency signal /acquisition sensitivity: -133dBm -- LQFP144 D
3 BM3013IE Multi-mode Satellite Navigation Baseband Chip, supporting BDS and GPS joint positioning, position accuracy better than 5m -- QFN64 F
(2) RF front-end (RF Receiver)
No. Device Description RH Packaging Maturity
1 BM3015ME BDS Multi-channel RF Front-end Chip, supporting signals of B1/B3, GPS L1/B3, GLON L1/B3 or GPS L1/L2 -- QFN48 D
11、High Voltage DC Contactor
 No. Device Description RH Packaging Maturity
1 1JB60-1 Sine Vibration: 10~2000Hz,196m/s²
Shock: 75g, 11ms
Contact Resistance: @Rated Current ≤0.8mΩ
Voltage/Current Rating: 110V/60A		 √ Hermetically Sealed D
2 1JB100-1 Sine Vibration: 10~2000Hz,196m/s²
Shock: 75g, 11ms
Contact Resistance: @Rated Current ≤0.5mΩ
Voltage/Current Rating: 110V/100A		 √ D
3 1JB150-1 Sine Vibration: 10~2000Hz,196m/s²
Shock: 75g, 11ms
Contact Resistance: @Rated Current ≤0.3mΩ
Voltage/Current Rating: 270V/150A		 √ D
4 1JB200-1 Sine Vibration: 10~2000Hz,196m/s²
Shock: 75g, 11ms
Contact Resistance: @Rated Current ≤0.3mΩ
Voltage/Current Rating: 110V200A		 √ D
5 1JT20-1 Sine Vibration: 10~2000Hz,196m/s²
Shock: 75g, 11ms
Contact Resistance: @Rated Current ≤3mΩ
Voltage/Current Rating: 330V/20A		 √ D
6 1JT100-1 Sine Vibration: 10~2000Hz,196m/s²
Shock: 75g, 11ms
Contact Resistance: @Rated Current ≤2mΩ
Voltage/Current Rating: 330V/100A		 √ D
12、High Reliable Power Semiconductor Device
(1) Diode
No. Device Description RH Packaging Maturity
1 2CZ5807 (US) Fast recovery diode in glass package, breakdown voltage: 55V /recovery time≤30ns √ Glass axial leaded package
/Glass surface mount package 		D
2 2CZ5809 (US) Fast recovery diode in glass package, breakdown voltage: 110V /recovery time≤30ns √ D
3 2CZ5811 (US) Fast recovery diode in glass package, breakdown voltage: 160V /recovery time≤30ns √ D
4 2CZ5802 (US) Fast recovery diode in glass package, breakdown voltage: 55V /recovery time≤25ns √ D
5 2CZ5804 (US) Fast recovery diode in glass package, breakdown voltage: 110V /recovery time≤25ns √ D
6 2CZ5806 (US) Fast recovery diode in glass package, breakdown voltage: 160V /recovery time≤25ns √ D
7 2CZ5615 (US) Fast recovery diode in glass package, breakdown voltage: 220V /recovery time≤150ns √ D
8 2CZ5415 (US) Fast recovery diode in glass package, breakdown voltage: 55V /recovery time≤150ns √ D
9 2CZ5416 (US) Fast recovery diode in glass package, breakdown voltage: 110V /recovery time≤150ns √ D
10 2CZ5417 (US) Fast recovery diode in glass package, breakdown voltage: 220V /recovery time≤150ns √ D
11 2CZ5418 (US) Fast recovery diode in glass package, breakdown voltage: 440V /recovery time≤150ns √ D
12 SDR1N Fast recovery diode in glass package, breakdown voltage: 1100V /recovery time≤80ns * U
13 1N4148 Fast recovery diode in glass package, breakdown voltage: 100V * Glass axial leaded package D
14 1N6642 Fast recovery diode in glass package, breakdown voltage: 100V * D
15 B10D20T High voltage fast recovery diode, breakdown voltage: 200V * TO series package /Module series package D
16 B50D20C High voltage fast recovery diode, breakdown voltage: 200V * D
17 B16D60ST High voltage fast recovery diode, breakdown voltage: 600V * D
18 B30D60SB High voltage fast recovery diode, breakdown voltage: 600V * D
19 B100D60C High voltage fast recovery diode, breakdown voltage: 600V * D
20 B11D120B High voltage fast recovery diode, breakdown voltage: 1200V * D
21 B15D120SB High voltage fast recovery diode, breakdown voltage: 1200V * D
22 B28D120SC High voltage fast recovery diode, breakdown voltage: 1200V * D
(2) Transistor
No. Device Description RH Packaging Maturity
1 3DK3500 Bipolar transistor √ TO-39 D
2 3DK3501 Bipolar transistor √ TO-39 D
3 3DK2222A Bipolar transistor √ TO-18 D
4 3DK2219A Bipolar transistor √ TO-39 D
5 2N3700 Bipolar transistor √ TO-18 D
6 2N5154 Bipolar transistor √ TO-39 D
7 2N5665 Bipolar transistor √ TO-66 D
8 2N5667 Bipolar transistor √ TO-39 D
9 2N5108 Microwave power transistor √ TO-39 D
10 2N5109 Microwave power transistor √ TO-39 D
11 3DA502 Microwave power transistor * Ceramic package D
13、VDMOS
No. Device Description RH Packaging Maturity
1 LCS7587U3RH BVDSS≥100V，ID≥22A,RDSON≤0.042Ω √ SMD-0.5 D
2 LCS7587T3RH BVDSS≥100V，ID≥20A,RDSON≤0.042Ω √ TO-257AA D
3 LCS7591U3RH BVDSS≥200V，ID≥16A,RDSON≤0.13Ω √ SMD-0.5 D
4 LCS7591T3RH BVDSS≥200V，ID≥16A,RDSON≤0.13Ω √ TO-257AA D
5 LCS7583U2RH BVDSS≥200V，ID≥56A,RDSON≤0.028Ω √ SMD-2 D
6 LCS7583T1RH BVDSS≥200V，ID≥45A,RDSON≤0.029Ω √ TO-254AA D
7 LCS7469T1RH BVDSS≥100V，ID≥75A,RDSON≤0.014Ω √ TO-254AA D
8 LCS7469U2RH BVDSS≥100V，ID≥45A,RDSON≤0.012Ω √ SMD-2 D
9 LCS7262U3RH BVDSS≥200V，ID≥9.4A,RDSON≤0.4Ω √ SMD-0.5 D
10 LCS7262T2RH BVDSS≥200V，ID≥5.5A,RDSON≤0.35Ω √ TO-39 D
11 LCS7269U1RH BVDSS≥200V，ID≥26A,RDSON≤0.1Ω √ SMD-1 D
12 LCS7269AU1RH BVDSS≥200V，ID≥26A,RDSON≤0.1Ω √ SMD-1 D
13 LCS7269T1RH BVDSS≥200V，ID≥26A,RDSON≤0.1Ω √ TO-254AA D
14 LCS7450T1RH BVDSS≥500V，ID≥12A,RDSON≤0.51Ω √ TO-254AA D
15 LCS7450U1RH BVDSS≥500V，ID≥12A,RDSON≤0.51Ω √ SMD-1 D
16 LCS7394U1RH BVDSS≥60V，ID≥35A,RDSON≤0.03Ω √ SMD-1 U
17 LCS7394T1RH BVDSS≥60V，ID≥35A,RDSON≤0.03Ω √ TO-254AA U
18 LCS7464T2RH BVDSS≥500V，ID≥2.5A,RDSON≤1.77Ω √ TO-39 U
19 LCS7390T2RH BVDSS≥200V，ID≥-4.0A,RDSON≤0.8Ω √ TO-39 D
20 LCS7383T3RH BVDSS≥200V，ID≥-6.5A,RDSON≤0.8Ω √ TO-257AA D
21 LCS7426T1RH BVDSS≥200V，ID≥-27A,RDSON≤0.16Ω √ TO-254AA D
22 LCS7382T3RH BVDSS≥100V，ID≥-11A,RDSON≤0.3Ω √ TO-257AA D
23 LCS7382U3RH BVDSS≥100V，ID≥-11A,RDSON≤0.29Ω √ SMD-0.5 D
24 LCS7382T2RH BVDSS≥100V，ID≥-6.5A,RDSON≤0.3Ω √ TO-39 D
25 LCS7391T1RH BVDSS≥400V，ID≥22A,RDSON≤0.2Ω √ TO-254AA U
26 CS7262 BVDSS≥200V，ID≥5.5A,RDSON≤0.35Ω √ TO-39 D
27 CS7262U BVDSS≥200V，ID≥5.5A,RDSON≤0.35Ω √ LCC18 D
28 CS7230 BVDSS≥200V，ID≥9A,RDSON≤0.4Ω √ TO-254AA U
29 CSN7250 BVDSS≥200V，ID≥26A,RDSON≤0.11Ω √ SMD-1 D
30 CSNA7260 BVDSS≥200V，ID≥43A,RDSON≤0.077Ω √ SMD-2 D
31 CSM7260 BVDSS≥200V，ID≥35A,RDSON≤0.077Ω √ TO-254AA D
32 CSHY57034 BVDSS≥60V，ID≥18A,RDSON≤0.040Ω √ TO-257AA U
14、Relay
(1) DC Solid State Relay
No. Device Description RH Packaging Maturity
1 4JG4-1 Maximum Surge Voltage Rating: 60Vd.c.
Load Current Range: 4A/channel(4 channel)
Turn-on Time: ＜100μs
Turn-off Time: ＜100ms
Strong Anti-overload		 -- Metal sealing U
2 RH1JG2-5 1 set of 2A load；input and output isolated by transformer；output by Power output：MOSFET；Strong Anti-overload √ Resistance welding metal encapsulation U
3 4JG7-1B 4 set of 7A load；input and output isolated by transformer；output by Power output：MOSFET；Strong Anti-overload -- metal laser welding encapsulation D
(2) Light-MOS Relay
No. Device Description RH Packaging Maturity
1 JGW-3M 1 set of 800mA load；AC/DC output；input/output PV isolation -- DIP/SMD-8 D
2 JGW-3011 1 set of 1A load；AC/DC output；input/output PV isolation -- DIP/SMD-6 D
3 JGW-3019 1 set of 500mA load；AC/DC output；input/output PV isolation -- DIP/SMD-4 D
4 JGW-3023 2 set of 500mA load；AC/DC output；input/output PV isolation -- DIP/SMD-8 D
5 JGW-3031 4 set of 500mA load；AC/DC output；input/output PV isolation -- DIP/SMD-16 D
(3) Electromagnetic Relay
No. Device Description RH Packaging Maturity
1 JQC-1010M 1PDT, 10 A/28Vdc，Size：20.6×10.5×16.3 √ Welding seal D
2 JQC-1110M 1PDT, 10 A/28Vdc，Size：20.6×10.5×16.3,with coil with transient suppression √ D
3 JQC-2005M DPDT, 5 A/28Vdc，Size：20.6×10.5×16.3 √ F
4 JQC-2105M DPDT, 5 A/28Vdc，Size：20.6×10.5×16.3,with coil transient suppression √ D
5 2JB5-1 Magnetic stick relay, DPDT, 5 A/28Vdc，Size：20.6×10.5×16.3 √ F
6 JQC-3010M 3PDT,10A/28Vdc，Size：20.6×20.6×16.3 √ D
7 JQC-3110M 3PDT,10A/28Vdc，Size：20.6×20.6×16.3，with coil transient suppression √ D
8 JMC-3010M Magnetic stick relay, 3PDT, 10A/28Vdc，Size：20.6×20.6×16.3 √ D
9 JQX-2010M DPDT,10A/28Vdc，Size：26×13.5×26 √ F
10 JQX-2110M DPDT,10A/28Vdc，Size：26×13.5×26，with coil transient suppression √ F
11 JQX-1025M 1PDT,25A/28Vdc，Size：26×13.5×26 √ D
12 JQX-1125M 1PDT,25A/28Vdc，Size：26×13.5×26，with coil transient suppression √ D
13 JMX-1025M Magnetic stick relay, 1PDT, 25A/28Vdc，Size：26×13.5×26 √ D
14 2JB15-1 Magnetic stick relay, DPDT, 15A/28Vdc，Size：26×13.5×26 √ F
15 2JB10-3 Magnetic stick relay, DPDT, 10A/28Vdc，Size：26×13.5×26 √ F
16 JQX-4010M 4PDT,10A/28Vdc，Size：26×26×26 √ D
17 JQX-4110M 4PDT,10A/28Vdc，Size：26×26×26，with coil transient suppression √ D
18 JMX-4010M Magnetic stick relay, 4PDT, 10A/28Vdc，Size：26×26×26 √ D
19 JMX-4015M Magnetic stick relay, 4PDT, 15A/28Vdc，Size：26×26×26 √ D
20 2JT2-3 Size：1/5 crystal can, DPDT,
 Rated load：2 A/28Vdc         		-- Laser Welding F
21 2JT5-2 Size：1/2 crystal can, DPDT,
Rated load：5A/28Vdc		 -- F
22 2JT10-3 Size：1/2 crystal can, DPDT,
Rated load：10A/28Vdc		 -- F
23 2JB2-1 Size：1/2 crystal can, Magnetic-latching relay, DPDT, Rated load：2A/28Vdc √ F
24 4JL2-1 Size：1/2 crystal can, 4PDT,
Rated load：2A /28Vdc		 -- F
25 4JB2-2 Size：1/2 crystal can, Magnetic-latching relay, 4PDT, Rated load：2A/28Vdc -- F
26 6JT2-1 Size：1/2 crystal can, 6PDT,
Rated load：2A /28Vdc		 -- F
27 2JT1-910 Circular sealed electromagnetic relay，DPDT, Rated load：1A/28Vdc，
Size：Ф8.51x7.11		 √ Welding seal F
28 2JT1-912 Circular sealed electromagnetic relay，transient suppression ,DPDT,
Rated load：1A/28Vdc，Size：Ф8.51x7.11		 -- D
29 2JB1-910 Circular sealed magnetic stick relay，DPDT, Rated load：1A /28Vdc，Size：Ф8.51x7.11 √ F
30 2JB1-911M2 Circular sealed magnetic stick relay，transient suppression , surface mount , DPDT, Rated load：1A /28Vdc，
Size：Ф8.51x7.11		 √ D
31 2JT1-920 Square sealed electromagnetic relays，DPDT, Rated load：1A/28Vdc，
Size：8.51x 8.51x7.11		 -- D
32 2JT1-940 Square sealed electromagnetic relays，DPDT, Rated load：1A /28Vdc，
Size：8.51x 8.51x9.53		 -- D
33 2JT1-942 Square sealed electromagnetic relays，transient suppression，DPDT,
Rated load：1A /28Vdc，Size：8.51x 8.51x11		 -- D
34 2JT2-910 Circular sealed electromagnetic relay，DPDT，Rated load：2A /28Vdc，
Size：Ф8.51x7.11		 -- D
(4) Isolated-Driving Module for MOSFET
No. Device Description RH Packaging Maturity
1 MD510 Driving Control Signal Voltage: 5V
Driving Output Voltage: 9.5V~13V
Low Power Dissipation: ≤0.12W
Input –Output Isolation: 600Vr.m.s
Actuation Temperature:-40~125℃ 		-- -- U
15、Connectors
(1)Micro Rectangular Electrical Connector
No. Device Description RH Packaging Maturity
1 J29A Elastic twisted wire pin, Contact spacing 1.91mm, Row spacing 1.65mm, Number of contacts: 9, 15, 21, 25, 31, 37 for two-row, 51, 66 for three-row, Rated current：5A, Contact resistance：≤10mΩ, Withstanding voltage：1500VDC -- glue sealed D
2 J30 Elastic twisted wire pin, Contact spacing 1.27mm, Row spacing 1.1mm, Number of contacts: 9, 15, 21, 25, 31, 37 for two-row, 51for three-row, Rated current：3A, Contact resistance：≤10mΩ, Withstanding voltage：800VAC -- D
3 J30J Elastic twisted wire pin, High reliability, contact spacing 1.27mm,row spacing 1.1mm, Number of contacts: 9, 15, 21, 25, 31, 37 for two-row, 51, 66 for three-row, 74, 100, 144 for four-row, Rated current：3A, Contact resistance：≤10mΩ, Withstanding voltage：800VAC -- F
(2) Nano miniature Rectangular Electrical Connector
No. Device Description RH Packaging Maturity
1 J63A Elastic twisted wire pin, High density, Contact spacing 0.635mm, Row spacing 1.016mm, Number of contacts: 9, 15, 21, 25, 31, 37, 51, 65 for two-row, Rated current：1A, Contact resistance：≤21mΩ, Withstanding voltage：250VAC -- glue sealed F
16、Photoelectric device
No. Device Description Maturity
1 Optical fiber coupler It's a 2×2 polarization-maintaining fiber coupler made of mono-mode/polarization-maintaining optical fiber by adopting fused biconical taper technique. It can split the polarized light into two in any proportion as required, with one at polarization state and the other as same as the original light input.
Splitting ratio:5/95-50/50%; Extinction ratio:≥18dB; Polarization-dependent loss: ≤0.10dB 		F
2 Optical fiber reflector Operating wavelength: 1310/1550nm; Operating bandwidth: ±40nm;
Reflectivity: ≥95.0％; Polarization crosstalk of pigtail: ≤-20.0dB
Temperature-dependent losses: ≤0.10dB
Optical damage threshold: 300mW; Ultimate tensile strength: 5.0N		 F
3 LiNbO3 integrated optical device As to LiNbO3 integrated optical device, electro-optical effect of LiNbO3 crystal and suitable electrode structure are adopted to achieve the phase modulation of 0~40GHz; annealed proton exchange or Ti-indiffusion is used to achieve single polarization or polarization-independent transmission of devices; different waveguiding structures are employed to achieve beam splitting/combination and phase/intensity modulation.
Operating wavelength:1310/1550nm; Modulation bandwidth:≥300MHz ;
Residual intensity modulation:<0.2%		 F
4 Photoelectric detector assembly Spectral response range: 900 ～ 1700nm
Transimpedance:500±0.5kΩ
Responsivity: 0.45V/μW(1310nm)，0.47V/μW(1550nm)
Bandwidth: ≥8.0MHz;  Noise:≤0.50mV, ≤0.70mV
Dynamic range: ≥25dB; Sensitivity: ≤-50dBm
Reflection loss: ≥25dB		 F
17、Silicon-substrate Sensor
(1) Silicon Micro-gyroscope
No. Device Description RH Packaging Maturity
1 BMG01-10 Measurement range: ±10°/s, scale factor: 256 LSB°/s -- CLCC36 D
2 BMG01-200 Measurement range: ±200°/s, scale factor: 64 LSB°/s -- CLCC36 D
3 BMG02-4K Measurement range: ±4000°/s, scale factor: 4 LSB°/s -- CLCC36 D
4 BMG02-9K Measurement range: ±9000°/s, scale factor: 2 LSB°/s -- CLCC36 D
5 BMG11-10 Measurement range: ±10°/s, scale factor: 512 LSB°/s -- CLCC36 U
(2) Silicon Micro-accelerometer
No. Device Description RH Packaging Maturity
1 BMA01-10 Measurement range: ±10g, zero-bias stability≤0.5mg -- CLCC36 U
2 BMA01-30 Measurement range: ±30g, zero-bias stability≤1mg -- CLCC36 U
3 BMA01-50 Measurement range: ±50g, zero-bias stability≤2mg -- CLCC36 U
4 BMA01-100 Measurement range: ±100g, zero-bias stability≤5mg -- CLCC36 U
(3) Shock Accelerometer
No. Device Description RH Packaging Maturity
1 BMS01-30K Measurement range: ±30000g, resolution: 10g -- TO263-5 U
2 BMS01-50K Measurement range: ±50000g, resolution: 50g -- TO263-5 U
3 BMS01-100K Measurement range: ±100000g, resolution: 100g -- TO263-5 U
4 BMS01-150K Measurement range: ±150000g, resolution: 1000g -- TO263-5 U
(4) Pressure Sensor
No. Device Description RH Packaging Maturity
1 BMP01 Measurement range: 0.7/1.7/3.5/5/7/10MPa
Precision≤±2.0%FS@ (-40～125℃) 		-- -- D
2 BMP04 Measurement range: 0.04 MPa,
precision: ±0.25%FS 		-- -- D
(5) Thermal Flow Sensor
No. Device Description RH Packaging Maturity
1 BMF01-1 Heating resistor: 0.60kΩ, reference resistor: 1.53kΩ, measuring resistor: 4.78kΩ -- (Customizable) U
2 BMF01-2 Heating resistor: 1.30kΩ, reference resistor: 3.57kΩ, measuring resistor: 20.4kΩ -- U
(6) Thermal Conductivity Vacuum Gauge
No. Device Description RH Packaging Maturity
1 BMF04-1 Reference resistor: 300Ω, measuring resistor: 150Ω -- TO5 U
2 BMF04-2 Reference resistor: 1370Ω, measuring resistor: 560Ω -- TO5 U
18、RF Cable Assembly
No. Device Description RH Maturity
1 Z-AFB142A-2.92-JM36/
2.92-JM36-L-F		 Frequency range: DC~40(GHz)
Insulation resistance: ≥5000MΩ
VSWR: 1.25max(DC~26.5GHz)
1.30max(26.5~32GHz)
1.35max(32~40 GHz)
Operation temperature range: -55~+85℃ 		√ F
2 Z-AFB142A-SMA-JM36/
SMA-JM36-L-F		 Frequency range: DC~18(GHz)
Insulation resistance: ≥5000MΩ
VSWR: 1.15max(DC~3GHz)
1.25max(3~8GHz)
1.35max(8~18 GHz)
Operation temperature range: -55~+85℃ 		√ F
3 Z-AFB205A-2.92-JM52/
2.92-JM52-L-X		 Frequency range: DC~26.5(GHz)
Insulation resistance: ≥5000MΩ
VSWR: 1.20max(DC~18GHz)
1.25max(18~22GHz)
1.30max(22~26.5 GHz)
Operation temperature range: -55~+85℃ 		√ F
4 Z-AFB205A-SMA-JM52/
SMA-JM52-L-X		 Frequency range: DC~18(GHz)
Insulation resistance: ≥5000MΩ
VSWR: 1.15max(DC~3GHz)
1.20max(3~8GHz)
1.30max(8~18 GHz)
Operation temperature range: -90~+90℃ 		√ F
5 Z-AFB205A-TNC-JWM52/
TNC-JWM52-L-X		 Frequency range: DC~11(GHz)
Insulation resistance: ≥5000MΩ
VSWR: 1.20max(DC~3GHz)
1.37max(3~11GHz)
Operation temperature range: -90~+90℃ 		√ F
6 Z-AFB311A-SMA-JM79/
SMA-JWM79-L-X		 Frequency range: DC~11(GHz)
Insulation resistance: ≥5000MΩ
VSWR: 1.15max(DC~3GHz)
1.30max(3~11 GHz)
Operation temperature range: -90~+90℃ 		√ F
7 Z-AFB311A-TNC-JM792/
TNC-JM792-L-X		 Frequency range: DC~5(GHz)
Insulation resistance: ≥5000MΩ
VSWR: 1.21max(DC~3GHz)
1.25max(3~5GHz)
Operation temperature range: -65~+125℃ 		√ F
19、Attitude control equipment
(1) Gyro
No. Device Description Maturity
1 Electromechanical gyro It is intended for detecting angular velocity and angle increment of carrier in motion, characterized by simple structure, low power consumption, low cost and medium measurement precision. Products at different precision levels have been successfully serialized. F
2 Laser gyro It is a new-type inertia instrument based on Sagnac effect. Its revolving speed is in direct proportion to the frequency difference of the forward & backward lasers. It is characterized by high precision, high reliability, long service and good environment suitability. Frequency-doubled dithering (RLG30, RLG50 and RLG90) and space frequency-quadrupled products have been successfully put into mass production. F
3 Fiber optic gyroscope Fiber optic gyroscope is an all-solid-state inertia instrument based on Sagnac effect and used to measure the angular velocity and angular displacement of the carrier. After years of technology research & development, and application guidance, the institute has had single-axis and integrated three-axis all-digital closed-loop optic fiber gyroscope series products of low, medium and high accuracy and accurate class with proprietary intellectual property rights. F
4 Magnetically suspended flywheel Magnetically suspended flywheel is key technology of three-axis stabilized satellite. It does not consume working medium, and its control moment accuracy is high. The product has reached engineering development level, achieved joint adjustment with whole spacecraft and met the satellite application requirements. F
5 Magnetically suspended control moment gyroscope Feathered by its large output torque enlargement factor and good dynamic property, is the preferred alternative for space station, large earth observation satellite and other large spacecraft which require high torque control actuator. F
(2) Accelerometer
No. Device Description Maturity
1 Quartz flexure accelerometer It is integrated with mechanical structure and servo control circuit. It can be used to measure physical quantities like displacement, velocity, accelerated speed and angle. Include SNJ-6000, SNJ-5100, SNJ-4200, SNJ-1000, SZH and other series products F
20、Navigation and measurement system
No. Device Description Maturity
1 Flexible strap-down attitude heading reference system Calculates the carrier attitude, course, speed and location information in real time via embedded computer on the basis of rotating angular velocity and visual acceleration information of internal flexible inertia instrument (gyroscope and accelerometer) sensing carrier, meanwhile receives GPS information for integrated navigation filtering and eventually proposes the optimized navigation results. F
2 Laser gyroscope inertia navigation system It is used to measure the carrier motion track. It can measure the course, attitude, angular velocity, speed, accelerated speed and other information and it is of higher product reliability and application accuracy. D
3 Rotary type laser gyroscope measuring system It is composed of inertia navigation parts, UPS power supply and mounting base plate with the functions of dynamic alignment on the sea, continuous alignment, high precision attitude measurement, high precision vertical displacement, heave movement measurement and good marine environment adaptability, etc. D
4 Locating and directing system of fiber-optic gyroscope It has the function of automatic north-seeking, which can output true north reference and attitude reference. The system has navigation function, which can operate in pure inertia navigation mode or integrated navigation mode (GPS, milemeter) and provide carrier course, attitude, speed, position and other navigation data. In the meantime, during long-time navigation, long-time navigation precision level of system can be improved through zero-speed updating function. D
5 Fiber-optic gyroscope north seeker It can complete north seeking position task of carrier through measuring the proportion of rotational angular velocity of the earth on sensitive axis by using fiber-optic gyroscope and resolving azimuth angle. Through combining the requirements of north-seeking time and precision, precision can meet the demands of different applications. F
6 MEMS-based integrated navigation system Multi-sensor error compensation and smoothing technologies are adopted for it to precisely provide carrier attitude, position, time, speed, height and other navigation data in real time, in the meantime, original data of satellite navigation and sensor can be also outputted for off-line processing of users, thus it is capable of meeting the requirements of navigation, measurement and control of various carriers. Besides, it can fuse algorithm through equipping milemeter, altimeter, wind meter, magnetic sensor according to demands. F
7 Gravity meter It adopts high precision quartz accelerometer as gravity measuring component and is integrated with high precision laser strapdown locating and directing system, it can be used to achieve continuous observation of earth gravitational field on air plane, ships and other moving carriers. F

21、Battery

(1) GaAs Solar Cell

No Device Description RH Maturity
1 SC-3GA-3 Triple junction GaAs solar cell, 30% efficiency √ F
2 SC-3GA-4 Triple junction GaAs solar cell, 32% efficiency √ F
3 SAP100a Top/bottom 1U panel, custimized
Optional accessories: Coarse sun sensor, Thermal sensor, MagneTorQuer, MEMS gyro, etc		 √ F
4 SAP101a Side 1U panel, custimized
Optional accessories: Coarse sun sensor, Thermal sensor, MagneTorQuer, MEMS gyro, etc		 √ F
5 SAP201a Side 2U panel, custimized
Optional accessories: Coarse sun sensor, Thermal sensor, MagneTorQuer, MEMS gyro, etc		 √ F
6 SAP301a Side 3U panel, custimized
Optional accessories: Coarse sun sensor, Thermal sensor, MagneTorQuer, MEMS gyro, etc		 √ F
7 SAP601a Side 6U panel, custimized
Optional accessories: Coarse sun sensor, Thermal sensor, MagneTorQuer, MEMS gyro, etc		 √ F

(2) Li-ion Battery

No Device Description RH Maturity
1 INP30 Nominal Capacity: 30Ah
Initial Capacity: ≥36.0 Ah
Working Voltage: 3.0~4.1V
Specific Energy: 170Wh/kg
Lifetime: LEO:8a（DOD≤20%）；GEO：18a（DOD≤80%） 		√ D
2 INP45 Nominal Capacity: 45h
Initial Capacity: ≥50.0 Ah
Working Voltage: 3.0~4.1V
Specific Energy: 180Wh/kg
Lifetime: LEO:8a（DOD≤20%）；GEO：18a（DOD≤80%） 		√ F

(3) Thermal Battery

No Device Description RH Maturity
1 Technical Platform of Long Operating Time Typical Value: 1500~5190s / F
2 Technical Platform of High Specific Power Typical Value: 10~30kW / F
3 Technical Platform of High Specific Energy Typical Value: 60~100Wh/kg / F
4 Technical Platform of High Voltage Typical Value: 160~450V / F
5 Technical Platform of Low Heat Radiation Typical Value: +15~+60℃（△T） / F
6 Technical Platform of Rapid Activation Typical Value:
0.1~0.3s		 / F
7 Technical Platform of High Temperature Typical Value: 400~500℃ / F

Remarks:
(1)RH:'√'means radiation-hardened, '--'means non radiation-hardened;
(2)Maturity: F( Flight-proven), D(Developed ), U(Under development)